Semiconductor device and process for fabrication thereof

ABSTRACT

A semiconductor chip is attached to a lead frame with a filmy organic die-bonding material having a water absorption of 1.5% by volume or less; having a saturation moisture absorption of 1.0% by volume or less, having a residual volatile component in an amount not more than 3.0% by weight, having a modulus of elasticity of 10 MPa or less at a temperature of 250° C. The semiconductor device thus obtained can be free from occurrence of reflow cracks during reflow soldering for the packaging of semiconductor devices.

TECHNICAL FIELD

[0001] This invention relates to a semiconductor device having a supportmember such as a lead frame to which a semiconductor die or chip isattached using a die-bonding material and encapsulated with resin, and aprocess for the fabrication of such a semiconductor device.

BACKGROUND ART

[0002] As methods by which semiconductor chips are attached to leadframes, a method has been used in which a die-bonding material is fedonto the lead frame and the semiconductor chip is bonded thereto.

[0003] Such a die-bonding material is known to include, e.g., Au—Sieutectics, solders and resin pastes. Of these, Au—Si eutectics haveproblems in that they are expensive, have a high modulus of elasticity,and require vibration at the bonding portion. The solders have problemsin that they can not withstand temperatures equal to or greater thantheir melting temperature and have a high modulus of elasticity.

[0004] As for the resin pastes, silver paste is the most commonlyavailable. Compared with other materials, silver paste is inexpensive,has a high heat resistance reliability and has a low modulus ofelasticity. Hence, they are most widely used as bonding materials forthe lead frames of ICs and LSIs.

[0005] In recent years, there has been a rapid increase in demand forhigh-density packaging as electronic machinery has been made smaller insize and thickness. In semiconductor packaging, conventional pininsertion packaging has been substituted by surface packaging, which hasbecome the prevailing packaging method suitable for high-densitypackaging.

[0006] In surface packaging, in order to directly solder leads toprinted-wiring substrates, packaging is carried out by infraredreflowing, vapor phase reflowing or solder dipping while heating thewhole package.

[0007] During this packaging, the whole package is exposed to hightemperatures of 210° C. to 260° C. Hence, any presence of moisture inthe package causes explosive vaporization of the moisture to causepackage cracks (hereinafter “reflow cracks”).

[0008] Such reflow cracks may cause a great lowering of the reliabilityof semiconductor packages, bringing about a serious technical problem.

[0009] The mechanism by which reflow cracks ascribable to die-bondingmaterials occur is as follows: During storage of semiconductor packages,(1) die-bonding materials absorb moisture, (2) this moisture isvaporized upon heating when packaged by reflowing and soldering, and (3)vapor pressure thus produced causes breaking or separation of thedie-bonding material layers, (4) so that the reflow cracks occur.

[0010] While reflow crack resistance of encapsulant has been improved,the reflow cracks ascribable to die-bonding materials provide a seriousmatter especially in thin-type packaging. Thus, it is strongly sought toimprove its reflow crack resistance.

[0011] The silver paste, having been most commonly used, tends to causereflow cracks because it has become difficult with the increase in sizeof chips to uniformly coat the silver paste on the whole surfacerequiring area and also because it is pasty itself and therefore tendsto cause voids in bonding layers.

DISCLOSURE OF THE INVENTION

[0012] The present invention provides a semiconductor device thatemploys a filmy organic die-bonding material, may cause no reflow cracksand has good reliability, and a process for fabrication thereof.

[0013] In the present invention, a filmy organic die-bonding material isused. This filmy organic material is such a filmy material that ismainly made of an organic material such as epoxy resin, silicone resin,acrylic resin, or polyimide resin (including an organic materialcontaining a metal filler or an inorganic material filler addedthereto). The filmy organic die-bonding material which has been heatedis contact-bonded to a support member such as a lead frame, and asemiconductor chip is placed on the filmy organic die-bonding materialand heat is applied to bond the chip. More particularly, resin paste isprovided in the form of a film so that die-bonding material is uniformlyapplied to the bonding portion.

[0014]FIG. 1 illustrates an example of a process for fabricating thesemiconductor device of the present invention.

[0015] The filmy organic die-bonding material 1 is cut in a prescribedsize with a cutter 2 ((a) in FIG. 1).

[0016] The filmy organic die-bonding material 1 is contact-bonded to adie pad 6 of a lead frame 5 on a heating platen 7 by means of a contactpress ((b) in FIG. 1). The contact bonding may preferably be carried outunder conditions of a temperature of from 100° C. to 250° C., a presstime of from 0.1 second to 20 seconds and a pressure of from 4 gf/mm² to200 gf/mm².

[0017] A semiconductor chip 8 is put on the filmy organic die-bondingmaterial 1 stuck to the die pad 6, followed by heat contact bonding(i.e., die bonding) ((c) in FIG. 1). The die bonding may preferably becarried out under conditions of a temperature of from 100° C. to 350°C., a bonding time of from 0.1 second to 20 seconds and a pressure offrom 0.1 gf/mm² to 30 gf/mm². More preferable conditions for die bondingare of a temperature of from 150° C. to 250° C., a bonding time of 0.1(inclusive) second to 2 seconds and a pressure of 0.1 gf/mm² to 4gf/mm², and the most preferable conditions for die bonding are of atemperature of from 150° C. to 250° C., a bonding time of 0.1(inclusive) second to 1.5 (exclusive) seconds and a pressure of 0.3gf/mm² to 2 gf/mm².

[0018] Then, the step of wire bonding ((d) in FIG. 1) follows, and thestep of encapsulating the semiconductor chip with resin ((e) in FIG. 1)further follows. Thus, the semiconductor device is produced. Referencenumeral 9 denotes an encapsulant resin.

[0019] For example, the filmy organic die-bonding material of thepresent invention is prepared by dissolving or dispersing an organicmaterial such as polyimide or epoxy resin and optionally an additivesuch as a metal filler in an organic solvent to obtain a coatingvarnish, coating this coating varnish on a carrier film such asbiaxially stretched polypropylene film, followed by evaporation of thesolvent, and peeling the filmy material from the carrier film. Whenprepared in this way, a film having self-supporting properties can beobtained.

[0020] The present inventors have discovered that the occurrence ofreflow cracks in semiconductor device correlates with the properties orcharacteristics of the filmy organic die-bonding material, and have madedetailed studies on the relationship between the occurrence of reflowcracks and the characteristics of the filmy organic die-bondingmaterial. As a result, they have accomplished the present invention.

[0021] According to a first embodiment of the present invention, thesemiconductor device and the process for its fabrication arecharacterized in that, in the semiconductor device having a supportmember to which a semiconductor chip is attached using a die-bondingmaterial and encapsulated with resin, a filmy organic die-bondingmaterial having a water absorption of 1.5% by volume or less is used asthe die-bonding material.

[0022] According to a second embodiment of the present invention, thesemiconductor device and the process for its fabrication arecharacterized in that, in the semiconductor device having a supportmember to which a semiconductor chip is attached using a die-bondingmaterial and then encapsulated with resin, a filmy organic die-bondingmaterial having a saturation moisture absorption of 1.0% by volume orless is used as the die-bonding material.

[0023] According to a third embodiment of the present invention, thesemiconductor device and the process for its fabrication arecharacterized in that, in the semiconductor device having a supportmember to which a semiconductor chip is attached using a die-bondingmaterial and then encapsulated with resin, a filmy organic die-bondingmaterial having a residual volatile component in an amount not more than3.0% by weight is used as the die-bonding material.

[0024] According to a fourth embodiment of the present invention, thesemiconductor device and the process for its fabrication arecharacterized in that, in the semiconductor device having a supportmember to which a semiconductor chip is attached using a die-bondingmaterial and then encapsulated with resin, a filmy organic die-bondingmaterial having a modulus of elasticity of 10 MPa or less at atemperature of 250° C. is used as the die-bonding material.

[0025] According to a fifth embodiment of the present invention, thesemiconductor device and the process for its fabrication arecharacterized in that, in the semiconductor device having a supportmember to which a semiconductor chip is attached using a die-bondingmaterial and then encapsulated with resin, a filmy organic die-bondingmaterial having, at the stage where the semiconductor chip is bonded tothe support member, a void volume of 10% or less in terms of voidspresent in the die-bonding material and at the interface between thedie-bonding material and the support member is used as the die-bondingmaterial.

[0026] According to a sixth embodiment of the present invention, thesemiconductor device and the process for its fabrication arecharacterized in that, in the semiconductor device having a supportmember to which a semiconductor chip is attached using a die-bondingmaterial and then encapsulated with resin, a filmy organic die-bondingmaterial having a peel strength of 0.5 Kgf/5×5 mm chip or above at thestage where the semiconductor chip is bonded to the support member isused as the die-bonding material.

[0027] According to a seventh embodiment of the present invention, thesemiconductor device and the process for its fabrication arecharacterized in that, in the semiconductor device having a supportmember to which a semiconductor chip is attached using a die-bondingmaterial and then encapsulated with resin, a filmy organic die-bondingmaterial i) having a planar dimension not larger than the planardimension of the semiconductor chip, and ii) not protruding outward fromthe region of the semiconductor chip (i.e., not to protrude from theinterface between the semiconductor chip and the support member) at thestage where the semiconductor chip is bonded to the support member isused as the die-bonding material.

[0028] In the embodiments of the present invention, the values of theproperties or characteristics of the filmy organic die-bondingmaterials, such as a water absorption of 1.5% by volume or less, asaturation moisture absorption of 1.0% by volume or less, a residualvolatile component in an amount not more than 3.0% by weight, or amodulus of elasticity of 10 MPa or less at a temperature of 250° C., arethe values measured at the stage before the filmy organic die-bondingmaterial is stuck onto the support member.

[0029] The filmy organic die-bonding material used in the firstembodiment of the present invention, having a water absorption of 1.5%by volume or less, the filmy organic die-bonding material used in thesecond embodiment of the present invention, having a saturation moistureabsorption of 1.0% by volume or less, the filmy organic die-bondingmaterial used in the fourth embodiment of the present invention, havinga modulus of elasticity of 10 MPa or less at a temperature of 250° C.,and the filmy organic die-bonding material used in the sixth embodimentof the present invention, having a peel strength of 0.5 Kgf/5×5 mm chipor above at the stage where the semiconductor chip is bonded to thesupport member, can be produced by controlling composition of the filmyorganic die-bonding material, e.g., the structure of polymers such aspolyimide and the content of fillers such as silver.

[0030] The filmy organic die-bonding material used in the thirdembodiment of the present invention, having a residual volatilecomponent in an amount not more than 3.0% by weight, and the filmyorganic die-bonding material used in the fifth embodiment of the presentinvention, having, at the stage where the semiconductor chip is bondedto the die-bonding material, a void volume of 10% or less in terms ofvoids present in the die-bonding material and at the interface betweenthe die-bonding material and the support member, can be produced bycontrolling the conditions for producing the filmy organic die-bondingmaterial, e.g., drying temperature, drying time and so forth.

[0031] The semiconductor chip includes commonly available semiconductorchips of ICs, LSIs, VLSIs and so forth, any of which may be used. Thedie bonding materials according to the present invention is suitablyused for the semiconductor chip as large a 5×5 mm or larger. The supportmember includes lead frames having die pads, ceramic wiring boards andglass-polyimide wiring boards, any of which may be used. FIG. 3 shows aplan view of an example of lead frames having die pads. The lead frame40 shown in FIG. 3 has die pads 41.

[0032] As the filmy organic die-bonding material, not only those havingsingle-layer structure but also those having multi-layer structure maybe used.

[0033] In the present invention, the filmy organic die-bonding materialmay have at the same time two or more properties or characteristics ofthose described above.

[0034] For example, properties or characteristics the filmy organicdie-bonding material may preferably have at the same time are asfollows:

[0035] (1) A filmy organic die-bonding material having a saturationmoisture absorption of 1.0% by volume or less and a residual volatilecomponent in an amount not more than 3.0% by weight;

[0036] (2) A filmy organic die-bonding material having a saturationmoisture absorption of 1.0% by volume or less, and a peel strength of0.5 Kgf/5×5 mm chip or above at the stage where the semiconductor chipis bonded to the support member;

[0037] (3) A filmy organic die-bonding material having a residualvolatile component in an amount not more than 3.0% by weight and a peelstrength of 0.5 Kgf/5×5 mm chip or above at the stage where thesemiconductor chip is bonded to the support member; and

[0038] (4) A filmy organic die-bonding material having a saturationmoisture absorption of 1.0% by volume or less, a residual volatilecomponent in an amount not more than 3.0% by weight, and a peel strengthof 0.5 Kgf/5×5 mm chip or above at the stage where the semiconductorchip is bonded to the support member.

[0039] In the present invention, the foregoing properties orcharacteristics of the filmy organic die-bonding material may be in anycombination in accordance with the purposes for which it is used.

[0040] The above (1) to (4) filmy organic die-bonding materials or thefilmy organic die-bonding materials having the above properties orcharacteristics in any other combinations may preferably be used asfilmy organic die-bonding materials each i) having a planar dimensionnot larger than the planar dimension of the semiconductor chip, and ii)not protruding outward from the region of the semiconductor chip at thestage where the semiconductor chip is bonded to the support member.

[0041] The semiconductor device of the present invention is free fromreflow cracks which might otherwise occur during reflow soldering forthe packaging of semiconductor devices, and has good reliability.

[0042] As the organic material constituting the filmy organicdie-bonding material of the present invention, polyimide resin ispreferred.

[0043] Tetracarboxylic dianhydrides used as starting materials for thepolyimide resin include:

[0044] 1,2-(ethylene)bis(trimellitate anhydride),

[0045] 1,3-(trimethylene)bis(trimellitate anhydride),

[0046] 1,4-(tetramethylene)bis(trimellitate anhydride),

[0047] 1,5-(pentamethylene)bis(trimellitate anhydride),

[0048] 1,6-(hexamethylene)bis(trimellitate anhydride),

[0049] 1,7-(heptamethylene)bis(trimellitate anhydride),

[0050] 1,8-(octamethylene)bis(trimellitate anhydride),

[0051] 1,9-(nonamethylene)bis(trimellitate anhydride),

[0052] 1,10-(decamethylene)bis(trimellitate anhydride),

[0053] 1,12-(dodecamethylene)bis(trimellitate anhydride),

[0054] 1,16-(hexadecamethylene)bis(trimellitate anhydride),

[0055] 1,18-(octadecamethylene)bis(trimellitate anhydride), pyromelliticdianhydride,

[0056] 3,3′,4,4′-diphenyltetracarboxylic dianhydride,

[0057] 2,2′,3,3′-diphenyltetracarboxylic dianhydride,

[0058] 2,2-bis(3,4-dicarboxyphenyl)propane dianhydride,

[0059] 2,2-bis(2,3-dicarboxyphenyl)propane dianhydride,

[0060] 1,1-bis(2,3-dicarboxyphenyl)ethane dianhydride,

[0061] 1,1-bis(3,4-dicarboxyphenyl)ethane dianhydride,

[0062] bis(2,3-dicarboxyphenyl)methane dianhydride,

[0063] bis(3,4-dicarboxyphenyl)methane dianhydride,

[0064] bis(3,4-dicarboxyphenyl)sulfone dianhydride,

[0065] 3,4,9,10-perylenetetracarboxylic dianhydride,

[0066] bis(3,4-dicarboxyphenyl)ether dianhydride,

[0067] benzene-1,2,3,4-tetracarboxylic dianhydride,

[0068] 3,4,3′,4′-benzophenonetetracarboxylic dianhydride,

[0069] 2,3,2′,3′-benzophenonetetracarboxylic dianhydride,

[0070] 2,3,3′,4′-benzophenonetetracarboxylic dianhydride,

[0071] 1,2,5,6-naphthalenetetracarboxylic dianhydride,

[0072] 2,3,6,7-naphthalenetetracarboxylic dianhydride,

[0073] 1,2,4,5-naphthalene-tetracarboxylic dianhydride,

[0074] 1,4,5,8-naphthalene-tetracarboxylic dianhydride,

[0075] 2,6-dichloronaphthalene-1,4,5,8-tetracarboxylic dianhydride,

[0076] 2,7-dichloronaphthalene-1,4,5,8-tetracarboxylic dianhydride,

[0077] 2,3,6,7-tetrachloronaphthalene-1,4,5,8-tetracarboxylicdianhydride,

[0078] phenanthrene-1,8,9,10-tetracarboxylic dianhydride,

[0079] pyrazine-2,3,5,6-tetracarboxylic dianhydride,

[0080] thiophene-2,3,4,5-tetracarboxylic dianhydride,

[0081] 2,3,3′,4′-biphenyltetracarboxylic dianhydride,

[0082] 3,4,3′,4′-biphenyltetracarboxylic dianhydride,

[0083] 2,3,2′,3′-biphenyltetracarboxylic dianhydride,

[0084] bis(3,4-dicarboxyphenyl)dimethylsilane dianhydride,

[0085] bis(3,4-dicarboxyphenyl)methylphenylsilane dianhydride,

[0086] bis(3,4-dicarboxyphenyl)diphenylsilane dianhydride,

[0087] 1,4-bis(3,4-dicarboxyphenyldimethylsilyl)benzene dianhydride,

[0088] 1,3-bis(3,4-dicarboxyphenyl)-1,1,3,3-tetramethyldicyclohexanedianhydride,

[0089] p-phenylenebis(trimellitate anhydride),

[0090] ethylenetetracarboxylic dianhydride,

[0091] 1,2,3,4-butanetetracarboxylic dianhydride,

[0092] decahydronaphthalene-1,4,5,8-tetracarboxylic dianhydride,

[0093]4,8-dimethyl-1,2,3,5,6,7-hexahydronaphthalene-1,2,5,6-tetracarboxylicdianhydride,

[0094] cyclopentane-1,2,3,4-tetracarboxylic dianhydride,

[0095] pyrrolidine-2,3,4,5-tetracarboxylic dianhydride,

[0096] 1,2,3,4-cyclobutanetetracarboxylic dianhydride,

[0097] bis(exo-bicyclo[2,2,1]heptane-2,3-dicarboxylicdianhydride)sulfone,

[0098] bicyclo-(2,2,2)-octo-7-ene-2,3,5,6-tetracarboxylic dianhydride,

[0099] 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride,

[0100] 2,2-bis[4-(3,4-dicarboxyphenoxy)phenyl]hexafluoropropanedianhydride,

[0101] 4,4′-bis(3,4-dicarboxyphenoxy)diphenylsulfide dianhydride,

[0102] 1,4-bis(2-hydroxyhexafluoroisopropyl)benzenebis(trimelliticanhydride),

[0103] 1,3-bis(2-hydroxyhexafluoroisopropyl)benzenebis(trimelliticanhydride),

[0104]5-(2,5-dioxotetrahydrofuril)-3-methyl-3-cyclohexene-1,2-dicarboxylicdianhydride, and

[0105] tetrahydrofuran-2,3,4,5-tetracarboxylic dianhydride.

[0106] Any of these may be used in the form of a mixture of two or morekinds.

[0107] Diamines used as starting materials for the polyimide resininclude aromatic diamines such as:

[0108] o-phenylenediamine,

[0109] m-phenylenediamine,

[0110] p-phenylenediamine,

[0111] 3,3′-diaminodiphenyl ether,

[0112] 3,4′-diaminodiphenyl ether,

[0113] 4,4′-diaminodiphenyl ether,

[0114] 3,3′-diaminodiphenylmethane,

[0115] 3,4′-diaminodiphenylmethane,

[0116] 4,4′-diaminodiphenylmethane,

[0117] bis(4-amino-3,5-dimethylphenyl)methane,

[0118] bis(4-amino-3,5-diisopropylphenyl)methane,

[0119] 3,3′-diaminodiphenyldifluoromethane,

[0120] 3,4′-diaminodiphenyldifluoromethane,

[0121] 4,4′-diaminodiphenyldifluoromethane,

[0122] 3,3′-diaminodiphenyl sulfone,

[0123] 3,4′-diaminodiphenyl sulfone,

[0124] 4,4′-diaminodiphenyl sulfone,

[0125] 3,3′-diaminodiphenyl sulfide,

[0126] 3,4′-diaminodiphenyl sulfide,

[0127] 4,4′-diaminodiphenyl sulfide,

[0128] 3,3′-diaminodiphenyl ketone,

[0129] 3,4′-diaminodiphenyl ketone,

[0130] 4,4′-diaminodiphenyl ketone,

[0131] 2,2-bis(3-aminophenyl)propane,

[0132] 2,2′-(3,4′-diaminodiphenyl)propane,

[0133] 2,2-bis(4-aminophenyl)propane,

[0134] 2,2-bis(3-aminophenyl)hexafluoropropane,

[0135] 2,2-(3,4′-diaminodiphenyl)hexafluoropropane,

[0136] 2,2-bis(4-aminophenyl)hexafluoropropane,

[0137] 1,3-bis(3-aminophenoxy)benzne,

[0138] 1,4-bis(3-aminophenoxy)benzene,

[0139] 1,4-bis(4-aminophenoxy)benzene,

[0140] 3,3′-(1,4-phenylenebis(1-methylethylidene))bisaniline

[0141] 3,4′-(1,4-phenylenebis(1-methylethylidene))bisaniline

[0142] 4,4′-(1,4-phenylenebis(1-methylethylidene))bisaniline

[0143] 2,2-bis(4-(3-aminophenoxy)phenyl)propane,

[0144] 2,2-bis(4-(4-aminophenoxy)phenyl)propane,

[0145] 2,2-bis(4-(3-aminophenoxy)phenyl)hexafluoropropane,

[0146] 2,2-bis(4-(4-aminophenoxy)phenyl)hexafluoropropane,

[0147] bis(4-(3-aminophenoxy)phenyl)sulfide,

[0148] bis(4-(4-aminophenoxy)phenyl)sulfide,

[0149] bis(4-(3-aminophenoxy)phenyl)sulfone, and

[0150] bis(4-(4-aminophenoxy)phenyl)sulfone;

[0151] and aliphatic diamines such as:

[0152] 1,2-diaminoethane,

[0153] 1,3-diaminopropane,

[0154] 1,4-diaminobutane,

[0155] 1,5-diaminopentane,

[0156] 1,6-diaminohexane,

[0157] 1,7-diaminoheptane,

[0158] 1,8-diaminooctane,

[0159] 1,9-diaminononane,

[0160] 1,10-diaminodecane,

[0161] 1,11-diaminoundecane, and

[0162] 1,12-diaminododecane.

[0163] Any of these may be used in the form of a mixture of two or morekinds.

[0164] The polyimide can be obtained by subjecting the tetracarboxylicdianhydride and the diamine to condensation by a known method. Morespecifically, using the tetracarboxylic dianhydride and the diamine insubstantially equimolar weights (the respective components may be addedin any order), the reaction is carried out in an organic solvent at areaction temperature of 80° C. or below, and preferably at 0° C. to 50°C. With the progress of the reaction, the viscosity of reaction mixturegradually increases, so that a polyimide precursor polyamic acid isformed.

[0165] The polyimide can be obtained by dehydration ring closure of theabove reaction product (polyamic acid). The dehydration ring closure maybe carried out by a method of heat treatment at 120° C. to 250° C. or bya chemical method.

[0166] Epoxy resin of glycidyl ether type, glycidylamine type, glycidylester type or alicyclic type may be used as organic materials for thefilmy organic die-bonding materials of the present invention.

[0167] As mentioned above, in the process for the fabrication of asemiconductor device according to the present invention, the die bondingmay preferably be carried out under conditions of a temperature of from100° C. to 350° C., a bonding time of from 0.1 second to 20 seconds anda pressure of from 0.1 gf/mm² to 30 gf/mm². More preferably, it iscarried out under conditions of a temperature of from 150° C. to 250°C., a bonding time of 0.1 (inclusive) second to 2 seconds and a pressureof 0.1 gf/mm² to 40 gf/mm², and the most preferably, under conditions offrom 150° C. to 250° C., a bonding time of 0.1 (inclusive) second to 1.5(exclusive) seconds and a pressure of 0.3 gf/mm² to 2 gf/mm².

[0168] When a filmy organic die-bonding material whose elastic modulusat a temperature of 250° C. is not more than 10 MPa is used, asufficient peel strength (for example, 0.5 Kgf/5×5 mm chip or more) canbe obtained by carrying out die-bonding under conditions of atemperature of from 150° C. to 250° C., a bonding time of 0.1(inclusive) second to 2 seconds and a pressure of 0.1 gf/mm² to 4gf/mm².

BRIEF DESCRIPTION OF THE DRAWINGS

[0169]FIG. 1 cross-sectionally illustrates an example of a process forfabricating the semiconductor device of the present invention.

[0170]FIG. 2 is a front elevation used to describe a method formeasuring peel strength by using a push-pull gauge.

[0171]FIG. 3 is a plan view of an example of lead frames having a diepads.

BEST MODE FOR CARRYING OUT THE INVENTION

[0172] The present invention will be described below in greater detailby giving Examples, but an embodiment of the present invention is notlimited to these examples. All of polyimides used in the followingexamples are obtained by heating the mixture of acid dianhydride withdiamine being the same mol as the acid dianhydride, in solvent, so as topolymerize them. In the following examples, polyimide A is a polyimidesynthesized from 1,2-(ethylene)bis(trimellitate anhydride) andbis(4-amino-3,5-dimethylphenyl)methane; polyimide B is a polyimidesynthesized from 1,2-(ethylene)bis(trimellitate anhydride) and4,4′-diaminodiphenylether; polyimide C is a polyimide synthesized from1,2-(ethylene)bis(trimellitate anhydride) andbis(4-amino-3,5-diisopropylphenyl)methane; polyimide D is a polyimidesynthesized from 1,2-(ethylene)bis(trimellitate anhydride) and2,2-bis[4-(4-aminophenoxy)phenyl]propane; polyimide E is a polyimidesynthesized from a mixture of 1,2-(ethylene)bis(trimellitate anhydride)and 1,10-(decamethylene)bis(trimellitate anhydride) being the same molas the mixture, and 2,2-bis[4-(4-aminophenoxy)phenyl] propane; polyimideF is a polyimide synthesized from 1,10-(decamethylene)bis(trimellitateanhydride) and 2,2-bis[4-(4-aminophenoxy)phenyl] propane.

EXAMPLE 1

[0173] To 100 g of each polyimide shown in Table 1 and 10 g of epoxyresin, 280 g of an organic solvent was added to make a solution. To thesolution obtained, silver powder was added in a stated amount, followedby thorough stirring so as to be homogeneously dispersed, to obtain acoating varnish.

[0174] This coating varnish was coated on a carrier film (OPP film;biaxially stretched polypropylene), followed by drying in a dryer withinternal air circulation to cause the solvent to evaporate and dry thevarnish. Thus, filmy organic die-bonding materials having thecomposition and water absorption as shown in Table 1 were prepared.

[0175] The filmy organic die-bonding materials as shown in Table 1 wereeach stuck onto the tab of the lead frame while heating at 160° C. Onthe lead frame to which the filmy organic die-bonding material was thusstuck, a semiconductor chip was mounted by die bonding carried out underconditions of a temperature of 300° C., a pressure of 12.5 gf/mm² and abonding time of 5 seconds, followed by wire bonding and then moldingwith an encapsulant material (trade name CEL-9000, available fromHitachi Chemical Co., Ltd.). Thus, a semiconductor device was fabricated(QFP: (Quad Flat Package) package: 14×20×1.4 mm; chip size: 8×10 mm; 42alloy lead frame).

[0176] The semiconductor device having been thus encapsulated wastreated in a thermo-hygrostat of 85° C. and 85% RH for 168 hours, andthereafter heated at 240° C. for 10 seconds in an IR (infrared) reflowfurnace.

[0177] Thereafter, the semiconductor device was molded with polyesterresin, and then cut with a diamond cutter to observe its cross sectionon a microscope. Rate (%) of occurrence of reflow cracks was measuredaccording to the following expression to make evaluation on the reflowcrack resistance.

(Number of occurrence of reflow cracks/number of tests)×100=rate (%) ofoccurrence of reflow cracks.

[0178] The results of evaluation are shown in Table 1. TABLE 1 Rate ofComposition of film Water occurrence of Ag content absorption reflowcracks No. Polyimide (wt. %) (%) (%) 1 Polyimide A 80 2.0 100 2Polyimide B 80 1.9 100 3 Polyimide C 80 1.8 100 4 Polyimide D 52 1.5 0 5Polyimide E 60 1.2 0 6 Polyimide E 0 1.0 0 7 Polyimide F 60 0.9 0 8Polyimide F 0 0.8 0 9 Polyimide F 40 0.7 0 10 Polyimide F 80 0.4 0Comparative Example: Silver paste* 1.7 100

[0179] A film with a size of 50×50 mm is used as a sample. The sample isdried at 120° C. for 3 hours in a vacuum dryer, and then left to cool ina desiccator. Thereafter, the dried weight of the sample is measured andis regarded as M1. The sample is immersed in distilled water at roomtemperature for 24 hours, and then taken out. The surface of the sampleis wiped with filter paper and its weight is immediately measured and isregarded as M2.

[0180] The water absorption is calculated according to the following:

[(M2−M1)/(M1/d)]×100=Water absorption (vol. %)

[0181] wherein d is the,density of the filmy organic die-bondingmaterial.

EXAMPLE 2

[0182] To 100 g of each polyimide shown in Table 2 and 10 g of epoxyresin, 280 g of an organic solvent was added to make a solution. To thesolution obtained, silver powder was added in a stated amount, followedby thorough stirring so as to be homogeneously dispersed, to obtain acoating varnish.

[0183] This coating varnish was coated on a carrier film (OPP film;biaxially stretched polypropylene), followed by drying in a dryer withinternal air circulation to cause the solvent to evaporate and dry thevarnish. Thus, filmy organic die-bonding materials having thecomposition and saturation moisture absorption as shown in Table 2 wereprepared.

[0184] The filmy organic die-bonding materials as shown in Table 2 wereeach stuck onto the tab of the lead frame while heating at 160° C. Onthe lead frame to which the filmy organic die-bonding material was thusstuck, a semiconductor chip was mounted by die bonding carried out underconditions of a temperature of 300° C., a pressure of 12.5 gf/mm² and abonding time of 5 seconds in examples No. 1 to 6 and the comparativeexample, and under conditions of a temperature of 230° C., a pressure of0.6 gf/mm² and a bonding time of 1 second in examples No. 7 to 10,followed by wire bonding and then molding with an encapsulant material(trade name CEL-9000, available from Hitachi Chemical Co., Ltd.). Thus,a semiconductor device was fabricated (QFP package: 14×20×1.4 mm; chipsize: 8×10 mm; 42 alloy lead frame).

[0185] The semiconductor device having been thus encapsulated wastreated in a thermo-hygrostat of 85° C. and 85% RH for 168 hours, andthereafter heated at 240° C. for 10 seconds in an IR reflow furnace.

[0186] Thereafter, the semiconductor device was molded with polyesterresin, and then cut with a diamond cutter to observe its cross sectionon a microscope. Rate (%) of occurrence of reflow cracks was measuredaccording to the following expression to make evaluation on the reflowcrack resistance.

(Number of occurrence of reflow cracks/number of tests)×100=rate (%) ofoccurrence of reflow cracks.

[0187] The results of evaluation are shown in Table 2. TABLE 2Saturation Rate of Composition of film moisture occurrence of Ag contentabsorption reflow cracks No. Polyimide (wt. %) (%) (%) 1 Polyimide A 801.7 100 2 Polyimide B 80 1.5 100 3 Polyimide C 80 1.4 100 4 Polyimide D80 1.0 0 5 Polyimide D 60 0.8 0 6 Polyimide D 40 0.6 0 7 Polyimide F 00.5 0 8 Polyimide F 60 0.4 0 9 Polyimide F 52 0.3 0 10 Polyimide F 400.2 0 Comparative Example: Silver paste* 1.2 100

[0188] A circular filmy organic die-bonding material of 10 mm diameteris used as a sample. The sample is dried at 120° C. for 3 hours in avacuum dryer, and then left to cool in a desiccator. Thereafter, thedried weight of the sample is measured and is regard as M1. The sampleis moisture-absorbed in a thermo-hygrostat of 85° C. and 85% RH, andthen taken out. Its weight is immediately measured until the values ofweight become constant. This weight is regarded as M2.

[0189] The saturation moisture absorption is calculated according to thefollowing:

[(M2−M1)/(M1/d)]×100=saturation moisture absorption (vol. %)

[0190] wherein d is the density of the filmy organic die-bondingmaterial.

EXAMPLE 3

[0191] To 100 g of polyimide F and 10 g of epoxy resin, 140 g ofdimethylacetamide and 140 g of cyclohexanone were added as organicsolvents to make a solution. To the solution obtained, 74 g of silverpowder was added, followed by thorough stirring so as to be homogenouslydispersed, to obtain a coating varnish.

[0192] This coating varnish was coated on a carrier film (OPP film;biaxially stretched polypropylene), followed by heating at temperaturesof from 80° C. to 120° C. in a dryer with internal air circulation tocause the solvent to evaporate and dry the varnish. Thus, filmy organicdie-bonding materials having the residual volatile component as shown inTable 3 were prepared. Here, when the drying temperature was higher than120° C., the coating was dried on the OPP film at 80° C. for 30 minutes,and thereafter the resulting filmy organic die-bonding material waspeeled from the OPP film, which was then held on an iron frame, andagain heated in the dryer to dry it.

[0193] The filmy organic die-bonding materials as shown in Table 3 wereeach stuck onto the tab of the lead frame while heating at 160° C. Onthe lead frame to which the filmy organic die-bonding material was thusstuck, a semiconductor chip was mounted by die bonding carried out underconditions of a temperature of 230° C., a pressure of 0.6 gf/mm² and abonding time of 1 second, followed by wire bonding and then molding withan encapsulant material (trade name CEL-9000, available from HitachiChemical Co., Ltd.). Thus, a semiconductor device was fabricated (QFPpackage: 14×20×1.4 mm; chip size: 8×10 mm; 42 alloy lead frame).

[0194] The semiconductor device having been thus encapsulated wastreated in a thermo-hygrostat of 85° C. and 85% RH for 168 hours, andthereafter heated at 240° C. for 10 seconds in an IR reflow furnace.

[0195] Thereafter, the semiconductor device was molded with polyesterresin, and then cut with a diamond cutter to observe its cross sectionon a microscope. Rate (%) of occurrence of reflow cracks was measuredaccording to the following expression to make evaluation on the reflowcrack resistance.

(Number of occurrence of reflow cracks/number of tests)×100=rate (%) ofoccurrence of reflow cracks.

[0196] The results of evaluation are shown in Table 3. TABLE 3 Rate ofResidual occurrence Drying Drying volatile of reflow temp. timecomponent Voids in cracks No. (° C.) (min) (wt. %) film (%) 1  80 30 6.5Present 100 2 100 2 4.9 Present 100 3 100 4 4.2 Present 100 4 100 10 3.8Present 80 5 100 30 3.5 Present_(i) 60 6 120 10 3.0 None 0 7 120 75 2.2None 0 8 140 10 2.0 None 0 9 160 10 1.5 None 0 10 140 60 1.2 None 0 11160 30 0.7 None 0 Comparative Example: Silver paste* 15.0  Present 100

[0197] A filmy organic die-bonding material with a size of 50×50 mm isused as a sample. The weight of the sample is measured and is regardedas M1. The sample is heated at 200° C. for 2 hours in a hygrostat withinternal air circulation, and thereafter its weight is immediatelymeasured and is regarded as M2.

[0198] The residual volatile component is calculated according to thefollowing:

[(M2−M1)/M1]×100=residual volatile component (wt. %)

EXAMPLE 4

[0199] To 100 g of polyimide D and 10 g of epoxy resin, 140 g ofdimethylacetamide and 140 g of cyclohexanone were added as organicsolvents to make a solution. To the solution obtained, 74 g of silverpowder was added, followed by thorough stirring so as to behomogeneously dispersed, to obtain a coating varnish.

[0200] This coating varnish was coated on a carrier film (OPP film;biaxially stretched polypropylene), followed by heating at temperaturesof from 80° C. to 120° C. in a dryer with internal air circulation tocause the solvent to evaporate and dry the varnish. Thus, filmy organicdie-bonding materials having the void volume as shown in Table 4 wereprepared. Here, when the drying temperature was higher than 120° C., thecoating was dried on the OPP film at 80° C. for 30 minutes, andthereafter the resulting filmy organic die-bonding material was peeledfrom the OPP film, which was then held on an iron frame, and againheated in the dryer to dry it.

[0201] Herein, the void volume refers to a void volume in terms of voidspresent in the die-bonding material and at the interface between thedie-bonding material and the support member at the stage where thesemiconductor chip is bonded to the support member.

[0202] The filmy organic die-bonding materials as shown in Table 4 wereeach stuck onto the tab of the lead frame while heating at 160° C. Onthe lead frame to which the filmy organic die-bonding material was thusstuck, a semiconductor chip was mounted by die bonding carried out underconditions of a temperature of 300° C., a pressure of 12.5 gf/mm² and abonding time of 5 seconds, followed by wire bonding and then moldingwith an encapsulant material (trade name CEL-9000, available fromHitachi Chemical Co., Ltd.). Thus, a semiconductor device was fabricated(QFP package: 14×20×1.4 mm; chip size: 8×10 mm; 42 alloy lead frame).

[0203] The semiconductor device having been thus encapsulated wastreated in a thermo-hygrostat of 85° C. and 85% RH for 168 hours, andthereafter heated at 240° C. for 10 seconds in an IR reflow furnace.

[0204] Thereafter, the semiconductor device was molded with polyesterresin, and then cut with a diamond cutter to observe its cross sectionon a microscope. Rate (%) of occurrence of reflow cracks was measuredaccording to the following expression to make evaluation on the reflowcrack resistance.

(Number of occurrence of reflow cracks/number of tests)×100=rate (%) ofoccurrence of reflow cracks.

[0205] The results of evaluation are shown in Table 4. TABLE 4 DryingDrying Rate of occurrence of temp. time Void volume reflow cracks No. (°C.) (min) (wt. %) (%) 1  80 30 30 100 2 100  2 22 100 3 100 10 17 80 4120 10 10 0 5 120 75 7 0 6 140 10 5 0 7 160 30 0 0 Comparative Example:Silver paste* 40 100

[0206] A silicone chip is bonded to a lead frame using the filmy organicdie-bonding material to make a sample. A photograph of a top view of thesample is taken using a soft X-ray device. The area percentage of voidsin the photograph is measured using an image analyzer, and the areapercentage of the voids seen through the sample from its top is regardedas void volume (%).

EXAMPLE 5

[0207] To 100 g of each polyimide shown in Table 5 and 10 g of epoxyresin, 280 g of an organic solvent was added to make a solution. To thesolution obtained, silver powder was added in a stated amount, followedby thorough stirring so as to be homogeneously dispersed, to obtain acoating varnish.

[0208] This coating varnish was coated on a carrier film (OPP film;biaxially stretched polypropylene), followed by drying in a dryer withinternal air circulation to cause the solvent to evaporate and dry thevarnish. Thus, filmy organic die-bonding materials having thecomposition and peel strength as shown in Table 5 were prepared.

[0209] Herein, the peel strength refers to the peel strength of thefilmy organic die-bonding material at the stage where the semiconductorchip is bonded to the support member through the filmy organicdie-bonding material.

[0210] The filmy organic die-bonding materials as shown in Table 5 wereeach stuck onto the tab of the lead frame while heating at 160° C. Onthe lead frame to which the filmy organic die-bonding material was thusstuck, a semiconductor chip was mounted by die bonding carried out underconditions of a temperature of 300° C., a pressure of 12.5 gf/mm² and abonding time of 5 seconds with respect to examples No. 1 to 5, andconditions of a temperature of 230° C., a pressure of 0.6 gf/mm² and abonding time of 1 second with respect to examples No. 6 to 10, followedby wire bonding and then molding with an encapsulant material (tradename CEL-9000, available from Hitachi Chemical Co., Ltd.). Thus, asemiconductor device was fabricated (QFP package: 14×20×1.4 mm; chipsize: 8×10 mm; 42 alloy lead frame).

[0211] The semiconductor device having been thus encapsulated wastreated in a thermo-hygrostat of 85° C. and 85% RH for 168 hours, andthereafter heated at 240° C. for 10 seconds in an IR reflow furnace.

[0212] Thereafter, the semiconductor device was molded with polyesterresin, and then cut with a diamond cutter to observe its cross sectionon a microscope. Rate (%) of occurrence of reflow cracks was measuredaccording to the following expression to make evaluation on the reflowcrack resistance.

(Number of occurrence of reflow cracks/number of tests)×100=rate (%) ofoccurrence of reflow cracks.

[0213] The results of evaluation are shown in Table 5. TABLE 5 Peel Rateof Composition of film strength occurrence of Ag content (Kgf/ reflowcracks No. Polyimide (wt. %) 5 × 5 mm chip) (%) 1 Polyimide B 80 0.2 1002 Polyimide C 80 0.3 100 3 Polyimide A 80 0.4 80 4 Polyimide D 80 0.5 05 Polyimide F 80 0.7 0 6 Polyimide F 0 0.8 0 7 Polyimide F 30 1.0 0 8Polyimide F 20 1.5 0 9 Polyimide F 40 >2.0 0 10 Polyimide F 52 >2.0 0

[0214] Method of Measuring a Peel Strength

[0215] On a support member, such as a tab surface of a lead frame, forsupporting semiconductor chips, a silicone chip (test piece) of 5×5 mmwas attached by laying a filmy organic die-bonding materialstherebetween. The chip-attached support member was held on a heatingplaten heated at a temperature of 240° C. for 20 seconds. As shown inFIG. 2, a peel strength was measured by a push-pull gauge at a testspeed of 0.5 mm/minute. In FIG. 2, reference numeral 21 represents asemiconductor chip, 22 represents a filmy organic die-bonding material,23 represents a lead frame, 24 represents the push-pull gauge, 25represents the heating platen. In this case, the test piece was held ata temperature of 240° C. for 20 seconds, but in a case where asemiconductor device is packaged at a different temperature depending onits purpose, the measurement must be performed at the temperature.

EXAMPLE 6

[0216] To 100 g of polyimide E and 10 g of epoxy resin, 280 g of anorganic solvent was added to make a solution. To the solution obtained,silver powder was added in a stated amount, followed by thoroughstirring so as to be homogeneously dispersed, to obtain a coatingvarnish.

[0217] This coating varnish was coated on a carrier film (OPP film;biaxially stretched polypropylene), followed by drying in a dryer withinternal air circulation to cause the solvent to evaporate and dry thevarnish. Thus, filmy organic die-bonding materials were prepared.

[0218] The filmy organic die-bonding materials, having the size as shownin Table 6, were each stuck onto the tab of the lead frame while heatingat 160° C. On the lead frame to which the filmy organic die-bondingmaterial was thus stuck, a semiconductor chip was mounted by die bondingcarried out under conditions of a temperature of 300° C., a pressure of12.5 gf/mm² and a bonding time of 5 seconds, followed by wire bondingand then molding with an encapsulant material (trade name CEL-9000,available from Hitachi Chemical Co., Ltd.). Thus, a semiconductor devicewas fabricated (QFP package: 14×20×1.4 mm; chip size: 8×10 mm; 42 alloylead frame).

[0219] The semiconductor device having been thus encapsulated wastreated in a thermo-hygrostat of 85° C. and 85% RH for 168 hours, andthereafter heated at 240° C. for 10 seconds in an IR reflow furnace.

[0220] Thereafter, the semiconductor device was molded with polyesterresin, and then cut with a diamond cutter to observe its cross sectionon a microscope. Rate (%) of occurrence of reflow cracks was measuredaccording to the following expression to make evaluation on the reflowcrack resistance.

(Number of occurrence of reflow cracks/number of tests)×100=rate (%) ofoccurrence of reflow cracks.

[0221] The results of evaluation are shown in Table 6. TABLE 6 PlanarRate of dimen- Planar Out- occurrence Film sion of Chips dimen- ward ofreflow size film size sion of protru- cracks No. (mm) (mm²) (mm) chipsion (%) 1 11 × 13 143 8 × 10 80 Yes 100 2 10 × 12 123 8 × 10 80 Yes 1003  9 × 11 99 8 × 10 80 Yes 100 4  9 × 10 90 8 × 10 80 Yes 70 5  8 × 1188 8 × 10 80 Yes 60 6  8 × 10 80 8 × 10 80 No 0 7 8 × 9 72 8 × 10 80 No0 8  7 × 10 70 8 × 10 80 No 0 9 8 × 9 72 8 × 10 80 No 0 10 6 × 8 48 8 ×10 80 No 0 11 5 × 7 35 8 × 10 80 No 0 12 4 × 6 24 8 × 10 80 No 0 13 3 ×5 15 8 × 10 80 No 0 14 2 × 4 8 8 × 10 80 No 0

EXAMPLE 7

[0222] To 100 g of polyimide F and 10 g of epoxy resin, 280 g of anorganic solvent was added to make a solution. To the solution obtained,silver powder was added in a stated amount, followed by thoroughstirring so as to be homogeneously dispersed, to obtain a coatingvarnish.

[0223] This coating varnish was coated on a carrier film (OPP film;biaxially stretched polypropylene), followed by drying in a dryer withinternal air circulation to cause the solvent to evaporate and dry thevarnish. Thus, filmy organic die-bonding materials were prepared.

[0224] The filmy organic die-bonding materials, having the modulus ofelasticity at a temperature of 250° C. as shown in Table 7, were eachstuck onto the tab of the lead frame while heating at 160° C. On thelead frame to which the filmy organic die-bonding material was thusstuck, a semiconductor chip was mounted by die bonding carried out underconditions shown in Table 7. TABLE 7 Film Conditions Composition of filmmodulus of Temper- Pres- Peel Ag content elastic ature sure strength No.Polyimide (wt. %) (MPa) (° C.) (gf/mm²) (Kgf/5 × 5 mm chip) 1 PolyimideF 60 0.2 230 2.0 >2.0 2 Polyimide F 40 0.3 230 20 >2.0 3 Polyimide F  00.4 230 2.0  0.8

[0225] Method of Measuring a Film Modulus of Elasticity (MPa)

[0226] By using RHEOLOGRAPH OF SOLID S type, available from KabushikiKaisha Toyoseiki Seisakusho, a dynamic viscoelasticity was measured at aheating speed of 5° C./minute and a frequency of 10 Hz. A storagemodulus E′ at a temperature of 250° C. was regarded as the modulus ofelasticity.

[0227] Method of Measuring a Peel Strength

[0228] It is as same as that of Example 5.

What is calimed is:
 1. A semiconductor device comprising a supportmember, a semiconductor chip, a die-bonding material for attaching thesemiconductor chip to the support member, and a resin encapsulant memberfor encapsulating the semiconductor chip, wherein: said die-bondingmaterial is a film containing an organic matter; said film having awater absorption of 1.5% by volume or less.
 2. A semiconductor devicecomprising a support member, a semiconductor chip, a die-bondingmaterial for attaching the semiconductor chip to the support member, anda resin encapsulant member for encapsulating the semiconductor chip,wherein: said die-bonding material is a film containing an organicmatter; said film having a saturation moisture absorption of 1.0% byvolume or less.
 3. A semiconductor device comprising a support member, asemiconductor chip, a die-bonding material for attaching thesemiconductor chip to the support member, and a resin encapsulant memberfor encapsulating the semiconductor chip, wherein: said die-bondingmaterial is a film containing an organic matter; said film having aresidual volatile component in an amount not more than 3.0% by weight.4. A semiconductor device comprising a support member, a semiconductorchip, a die-bonding material for attaching the semiconductor chip to thesupport member, and a resin encapsulant member for encapsulating thesemiconductor chip, wherein: said die-bonding material is a filmcontaining an organic matter; said film having a modulus of elasticityof 10 MPa or less at a temperature of 250° C.
 5. A semiconductor devicecomprising a support member, a semiconductor chip, a die-bondingmaterial for attaching the semiconductor chip to the support member, anda resin encapsulant member for encapsulating the semiconductor chip,wherein: said die-bonding material is a film containing an organicmatter; said film having, at the stage where the semiconductor chip hasbeen bonded to the support member, a void volume of 10% or less in termsof voids present in the die-bonding material and at the interfacebetween the die-bonding material and the support member.
 6. Asemiconductor device comprising a support member, a semiconductor chip,a die-bonding material for attaching the semiconductor chip to thesupport member, and a resin encapsulant member for encapsulating thesemiconductor chip, wherein: said die-bonding material is a filmcontaining an organic matter; said film having a peel strength of 0.5Kgf/5×5 mm chip or above at the stage where the semiconductor chip hasbeen bonded to the support member.
 7. A semiconductor device comprisinga support member, a semiconductor chip, a die-bonding material forattaching the semiconductor chip to the support member, and a resinencapsulant member for encapsulating the semiconductor chip, wherein:said die-bonding material is a film containing an organic matter; saidfilm i) having a planar dimension not larger than the planar dimensionof the semiconductor chip, and ii) not protruding outward from theregion of the semiconductor chip at the stage where the semiconductorchip has been bonded to the support member.
 8. A process for fabricatinga semiconductor device, comprising the steps of attaching asemiconductor chip to a support member, and encapsulating thesemiconductor chip with a resin: said attaching being carried out with afilmy die-bonding material containing an organic matter; said filmydie-bonding material having a water absorption of 1.5% by volume orless.
 9. A process for fabricating a semiconductor device, comprisingthe steps of attaching a semiconductor chip to a support member, andencapsulating the semiconductor chip with a resin; said attaching beingcarried out with a filmy die-bonding material containing an organicmatter; said filmy die-bonding material having a saturation moistureabsorption of 1.0% by volume or less.
 10. A process for fabricating asemiconductor device, comprising the steps of attaching a semiconductorchip to a support member, and encapsulating the semiconductor chip witha resin; said attaching being carried out with a filmy die-bondingmaterial containing an organic matter; said filmy die-bonding materialhaving a residual volatile component in an amount not more than 3.0% byweight.
 11. A process for fabricating a semiconductor device, comprisingthe steps of attaching a semiconductor chip to a support member, andencapsulating the semiconductor chip with a resin; said attaching beingcarried out with a filmy die-bonding material containing an organicmatter; said filmy die-bonding material having a modulus of elasticityof 10 MPa or less at a temperature of 250° C.
 12. A process forfabricating a semiconductor device, comprising the steps of attaching asemiconductor chip to a support member, and encapsulating thesemiconductor chip with a resin; said attaching being carried out with afilmy die-bonding material containing an organic matter; said filmydie-bonding material having, at the stage where the semiconductor chiphas been bonded to the support member, a void volume of 10% or less interms of voids present in the die-bonding material and at the interfacebetween the die-bonding material and the support member.
 13. A processfor fabricating a semiconductor device, comprising the steps ofattaching a semiconductor chip to a support member, and encapsulatingthe semiconductor chip with a resin; said attaching being carried outwith die-bonding material comprising a filmy die-bonding materialcontaining an organic matter; said filmy die-bonding material having apeel strength of 0.5 kgf/5×5 mm chip or above at the stage where thesemiconductor chip has been bonded to the support member.
 14. A processfor fabricating a semiconductor device, comprising the steps ofattaching a semiconductor chip to a support member, and encapsulatingthe semiconductor chip with a resin; said attaching being carried outwith a filmy die-bonding material containing an organic matter; saidfilmy die-bonding material i) having a planar dimension not larger thanthe planar dimension of the semiconductor chip, and ii) not protrudingoutward from the region of the semiconductor chip at the stage where thesemiconductor chip has been bonded to the support member.
 15. A processfor fabricating a semiconductor device, comprising the steps ofattaching a semiconductor chip to a support member, and encapsulatingthe semiconductor chip with a resin; said attaching being carried outwith a filmy die-bonding material containing an organic matter; theprocess further comprising the steps of mounting said semiconductor chipon said filmy die-bonding material; and attaching said semiconductorchip to said filmy die-bonding material under conditions of atemperature of 150° C. to 250° C., bonding time of 0.1 (inclusive)second to 2 seconds, and a pressure of 0.1 to 4 gf/mm².
 16. A processfor fabricating a semiconductor device, according to any one of claims 8to 13 and 14, further comprising the steps of mounting saidsemiconductor chip on said filmy die-bonding material; and attachingsaid semiconductor chip to said filmy die-bonding material underconditions of a temperature of 150° C. to 250° C., bonding time of 0.1(inclusive) second to 2 seconds, and a pressure of 0.1 to 4 gf/mm².